DocumentCode
1132910
Title
Developing device models
Author
Hu, Bo ; Wakayama, Cherry ; Zhou, Lili ; Shi, C. -J Richard
Author_Institution
Mixed-Signal CAD Res. Lab., Univ. of Washington, Seattle, WA, USA
Volume
21
Issue
4
fYear
2005
Firstpage
6
Lastpage
11
Abstract
Describes rapid implementation of semiconductor device models in SPICE using an MCAST compact model compiler. Device-model development is a vital component of circuit design and is traditionally a very challenging task. To overcome this challenge, it would be beneficial for model developers to use high-level behavioral language and model compilers. Implementations of MOS level-3 models and BSIMSOI models have demonstrated that this behavioral modeling approach is more efficient and practical than traditional C/FORTRAN methodologies and could save future model developers a significant amount of time and cost in implementation and maintenance. With the further enhancement and wider acceptance of this new approach, it is expected to promote more and better device models in the near future.
Keywords
MOSFET; SPICE; hardware description languages; semiconductor device models; silicon-on-insulator; BSIMSOI models; MCAST compact model compiler; MOS level-3 models; SOI MOSFET; SPICE; VHDL-AMS behavioral modeling approach; high-level behavioral language; semiconductor device models; Circuit simulation; Circuit synthesis; Electronics industry; Equations; Hardware design languages; MOS devices; Manuals; Mathematical model; Physics; Semiconductor device modeling;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/MCD.2005.1492712
Filename
1492712
Link To Document