Air-stable doping of Bi2Se3 by MoO3 into the topological regime

Author

Edmonds, M.T. ; Hellerstedt, J.T. ; Tadich, A. ; Schenk, A. ; O´Donnell, K.M. ; Tosado, J. ; Butch, N.P. ; Syers, P. ; Paglione, J. ; Fuhrer, M.S.

Author_Institution

Sch. of Phys., Monash Univ., Clayton, VIC, Australia

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

56

Lastpage

59

Abstract

We study vacuum deposition of molecular MoO₃ as an acceptor surface transfer dopant for topological insulator Bi₂Se₃. We perform high-resolution photoelectron spectroscopy on in-situ cleaved Bi₂Se3 single crystals and in-situ transport measurements on Bi₂Se₃ films grown by molecular beam epitaxy. MoO₃ is an efficient acceptor, lowering the surface Fermi energy to within -100 meV of the Dirac point, in the topological regime. A 100 nm MoO₃ film provides an air-stable doping and passivation layer.

Keywords

Fermi level; bismuth compounds; molecular beam epitaxial growth; molybdenum compounds; passivation; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; surface energy; topological insulators; vacuum deposition; Bi₂Se₃:MoO₃; Dirac point; acceptor surface transfer dopant; air-stable doping; high-resolution photoelectron spectroscopy; in-situ cleaved single crystals; in-situ transport measurement; molecular beam epitaxy; passivation layer; size 100 nm; surface Fermi energy; topological insulator; vacuum deposition; Atmospheric measurements; Charge carrier density; Charge transfer; Doping; Films; Passivation; Bi2Se3; MoO3; molecular doping;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038651

Filename

7038651