Title :
Characterisation of SiNx-HgCdTe interface in metal-insulator-semiconductor structure
Author :
Zhang, J. ; Umana-Membreno, G.A. ; Gu, R. ; Lei, W. ; Antoszewski, J. ; Dell, J.M. ; Faraone, L.
Author_Institution :
Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
Abstract :
In this paper, we report results of a study of SiNx films deposited on HgCdTe epitaxial layers. Hydrogenated amorphous SiNx films were deposited by inductively-coupled plasma-enhanced chemical vapour deposition at relatively low substrate temperatures (80°C-100°C). The capacitance-voltage characteristics of SiNx/n-Hg0.68Cd0.32Te metal-insulator-semiconductor structures indicated that Si-rich SiNx films deposited at 100°C can be employed as electrical passivation layers.
Keywords :
II-VI semiconductors; MIS structures; amorphous state; cadmium compounds; hydrogen; mercury compounds; passivation; plasma CVD; semiconductor epitaxial layers; silicon compounds; SiNx-HgCdTe; capacitance-voltage characteristics; electrical passivation layers; epitaxial layers; hydrogenated amorphous films; inductively-coupled plasma-enhanced chemical vapour deposition; metal-insulator-semiconductor structure; substrate temperatures; temperature 80 degC to 100 degC; Films; Passivation; Plasma temperature; Silicon nitride; Substrates; Temperature measurement; hydrogenated silicon nitride; interface states; mercury compounds; surface passivation;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038653
