Sidewall evolution in VLS grown GaAs nanowires

Author

Nian Jiang ; Wong-Leung, Jennifer ; Qiang Gao ; Hark Hoe Tan ; Jagadish, Chennupati

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

87

Lastpage

89

Abstract

The sidewalk of Au-catalysed GaAs nanowires are studied systematically by using transmission electron microscopy. The cross-sectional shape of the VLS grown nanowires was found to consist of 3 curved surfaces along {112}A. The curved surfaces evolve into three {112}A and three {112}B facets towards the base of the nanowire due to the radial growth around the nanowire. These sidewalls transform to {110} facets at high temperature annealing and the transformation rate is determined by the cross-sectional shape and size of the nanowires.

Keywords

III-V semiconductors; annealing; gallium arsenide; nanofabrication; nanowires; semiconductor growth; transmission electron microscopy; Au-catalysed GaAs nanowire sidewall; GaAs; VLS grown GaAs nanowires; curved surface; high temperature annealing; nanowire size; transformation rate; transmission electron microscopy; {110} facet; {112}A facet; {112}A surface; {112}B facet; Annealing; Educational institutions; Gallium arsenide; Gold; Nanowires; Scanning electron microscopy; Surface morphology; Epitaxial growth; III-V semiconductor materials; Nanowires;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038659

Filename

7038659