DocumentCode :
1133123
Title :
Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology
Author :
Li, Hao ; Rein, Hans-Martin
Author_Institution :
Ruhr-Univ. Bochum, Germany
Volume :
38
Issue :
2
fYear :
2003
fDate :
2/1/2003 12:00:00 AM
Firstpage :
184
Lastpage :
191
Abstract :
Millimeter-wave voltage-controlled oscillators (VCOs) are presented which are fully integrated in a SiGe bipolar production technology. The low-cost differential circuits have been designed and optimized for low phase noise and wide tuning range. As an example, by varying the bias voltage of the on-chip varactor, the oscillation frequency can be changed from 36 to 46.9 GHz (i.e., by 26%). In this wide frequency range, phase noise between -107 and -110dBc/Hz at 1-MHz offset frequency and single-ended voltage swing of about 0.95Vpp ±10% (differential: 1.9Vpp) were measured. The circuit consumes 280mW at -5.5-V supply voltage. The high oscillation frequency and low phase noise at wide tuning range are record values for fully integrated oscillators in Si-based technologies. The basic oscillator was then extended by a cascode stage as an output buffer. Now the VCO performance is no longer degraded if nonperfectly terminated transmission lines are driven. Thus, the chip can be mounted in a low-cost socket; however, at the cost of increased phase noise and power consumption.
Keywords :
Ge-Si alloys; bipolar MIMIC; circuit optimisation; circuit tuning; integrated circuit noise; millimetre wave oscillators; phase noise; semiconductor materials; voltage-controlled oscillators; -5.5 V; 0.35 micron; 280 mW; 36 to 46.9 GHz; SiGe; SiGe bipolar production technology; VCO performance; bias voltage variation; cascode stage; fully integrated oscillators; high oscillation frequency; low phase noise; low-cost differential circuits; low-cost socket; millimeter-wave voltage-controlled oscillators; mm-wave VCOs; nonperfectly terminated transmission lines; on-chip varactor; oscillation frequency; output buffer; power consumption; single-ended voltage swing; wide tuning range; Circuit optimization; Frequency; Germanium silicon alloys; Integrated circuit technology; Millimeter wave integrated circuits; Millimeter wave technology; Phase noise; Production; Silicon germanium; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2002.807404
Filename :
1175498
Link To Document :
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