Hybrid integration of a tunneling diode and a 1060-nm semiconductor laser

Author

Junping Mi ; Hongyan Yu ; Huolei Wang ; Shaoyang Tan ; Weixi Chen ; Ying Ding ; Jiaoqing Pan

Author_Institution

Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

121

Lastpage

123

Abstract

We report on a hybrid integrated tunneling diode, with a simple structure, and a quantum well laser diode, lasing at around 1060 nm, on GaAs substrate. The basic DC-characteristics of the integrated circuit was measured and analyzed. Obvious negative differential resistance regions were shown in the electrical and optical output. The device has potential applications in biomedicine and optical interconnects.

Keywords

hybrid integrated circuits; integrated optoelectronics; negative resistance; quantum well lasers; tunnel diodes; GaAs; GaAs substrate; basic DC-characteristics; biomedicine; electrical output; hybrid integrated tunneling diode; integrated circuit; negative differential resistance regions; optical interconnects; optical output; quantum well laser diode; semiconductor laser; wavelength 1060 nm; Biomedical optical imaging; Diode lasers; Optical fibers; Oscillators; Semiconductor diodes; Semiconductor lasers; Hybrid integration; microwave photonics; semiconductor laser; tunneling diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038667

Filename

7038667