Title :
Hybrid integration of a tunneling diode and a 1060-nm semiconductor laser
Author :
Junping Mi ; Hongyan Yu ; Huolei Wang ; Shaoyang Tan ; Weixi Chen ; Ying Ding ; Jiaoqing Pan
Author_Institution :
Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
Abstract :
We report on a hybrid integrated tunneling diode, with a simple structure, and a quantum well laser diode, lasing at around 1060 nm, on GaAs substrate. The basic DC-characteristics of the integrated circuit was measured and analyzed. Obvious negative differential resistance regions were shown in the electrical and optical output. The device has potential applications in biomedicine and optical interconnects.
Keywords :
hybrid integrated circuits; integrated optoelectronics; negative resistance; quantum well lasers; tunnel diodes; GaAs; GaAs substrate; basic DC-characteristics; biomedicine; electrical output; hybrid integrated tunneling diode; integrated circuit; negative differential resistance regions; optical interconnects; optical output; quantum well laser diode; semiconductor laser; wavelength 1060 nm; Biomedical optical imaging; Diode lasers; Optical fibers; Oscillators; Semiconductor diodes; Semiconductor lasers; Hybrid integration; microwave photonics; semiconductor laser; tunneling diode;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038667
