Title :
Femtosecond spectrally resolved nonlinear spectroscopy: Study of Si quantum dots
Author :
Vuong Van Cuong ; Nguyen Dai Hung ; Khuong Ba Dinh ; Lap Van Dao
Author_Institution :
Hanoi Nat. Univ. of Educ., Hanoi, Vietnam
Abstract :
We report on the use of femtosecond spectrally resolved two colour three-pulse nonlinear spectroscopy to study the carrier relaxation in Si quantum dots. The third-order polarization for a coupled two-level system is applied for theoretical simulations. The optical phonon-assisted transition leads to a fast decay (20 fs) of hot carriers.
Keywords :
elemental semiconductors; high-speed optical techniques; hot carriers; semiconductor quantum dots; silicon; Si; Si quantum dots; carrier relaxation; coupled two-level system; femtosecond spectrally resolved nonlinear spectroscopy; femtosecond spectrally resolved two colour three-pulse nonlinear spectroscopy; hot carriers; optical phonon-assisted transition; third-order polarization; Optical mixing; Phonons; Quantum dots; Silicon; Sociology; Ultrafast optics; Four-wave mixing; Measurement by laser beam; Optical variables measurement; Silicon photonics;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038670
