Fabrication and photoluminescence studies of GaN nanopillars

Author

Parvathala Reddy, N. ; Naureen, Shagufta ; Fan Wang ; Vora, Kaushal ; Shahid, Naeem ; Karouta, Fouad ; Hark Hoe Tan ; Jagadish, Chennupati

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

133

Lastpage

135

Abstract

GaN nanopillar arrays are fabricated by inductively coupled plasma reactive ion etching (ICP-RIE) of lithographically patterned GaN epilayers grown on sapphire substrate. The morphology and optical quality of the nanopillars is investigated by scanning electron microscopy (SEM) and micro-photoluminescence (μ-PL) respectively. The PL intensity of the nanopillars is enhanced by a factor of more than four compared to that of the epitaxial layers. However, a small increase in the full width half maximum (FWHM) of the nanopillar PL spectra is observed.

Keywords

III-V semiconductors; epitaxial growth; gallium compounds; nanofabrication; nanolithography; nanopatterning; nanostructured materials; photoluminescence; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; sputter etching; wide band gap semiconductors; GaN; GaN nanopillar array fabrication; ICP-RIE; SEM; epitaxial layer; inductively coupled plasma reactive ion etching; lithographically patterned GaN epilayer growth; microphotoluminescence intensity; nanopillar morphology; optical quality; sapphire substrate; scanning electron microscopy; Etching; Gallium nitride; Integrated optics; Morphology; Optical arrays; Optical device fabrication; Dry etching; GaN; ICP-RIE; nanopillar arrays; photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038671

Filename

7038671