DocumentCode :
1133196
Title :
Turn-Off Characteristics of Power Transistors Using Emitter-Open Turn-Off
Author :
Chen, Dan Y. ; Jackson, Barry
Author_Institution :
Virginia Polytechnic Institute and State University
Issue :
3
fYear :
1981
fDate :
5/1/1981 12:00:00 AM
Firstpage :
386
Lastpage :
391
Abstract :
As compared with conventional reverse-biased turn-off, emitteropen turn-off provides superior transistor turn-off characteristics. Not only are the storage time and the fall time of the power transsistors much reduced, but also the device reverse-biased second breakdown phenomenon, commonly associated with turn-off of inductive load, is eliminated. Furthermore the storage time tolerance due to device variation and temperature change is minimized.
Keywords :
Electric breakdown; Energy efficiency; Low voltage; Power electronics; Power transistors; Reliability; Switching circuits; Teleprinting; Temperature; Turning;
fLanguage :
English
Journal_Title :
Aerospace and Electronic Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9251
Type :
jour
DOI :
10.1109/TAES.1981.309066
Filename :
4102508
Link To Document :
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