Title :
Temperature dependence of threshold switching in NbOx thin films
Author :
Shuai Li ; Xinjun Liu ; Nandi, Sanjoy Kumar ; Venkatachalam, Dinesh Kumar ; Elliman, Robert Glen
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ. (ANU), Canberra, ACT, Australia
Abstract :
The threshold switching characteristics of amorphous NbOx thin films is investigated with particular emphasis on temperature dependence of the switching characteristics. Threshold switching in this material is believed to result from a thermally-induced insulator-metal-transition (IMT) induced along a filamentary path by local Joule heating. Increasing the operating temperature is shown to lead to a reduction in the resistance of the high-resistance state and to a reduction in the threshold switching voltage. These results are discussed in relation to the transport properties of NbOx and the IMT switching model.
Keywords :
electrical conductivity transitions; electrical resistivity; metal-insulator transition; niobium compounds; thin films; IMT switching model; NbOx; high-resistance state; local Joule heating; temperature dependence; thermally-induced insulator-metal-transition; thin films; threshold switching; transport properties; Materials; Resistance; Switches; Temperature; Temperature dependence; Temperature measurement; Threshold voltage; Amorphous NbOx; Non-volatile memory; Selector Device; Threshold Switching;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038673
