Temperature dependence of threshold switching in NbOx thin films

Author

Shuai Li ; Xinjun Liu ; Nandi, Sanjoy Kumar ; Venkatachalam, Dinesh Kumar ; Elliman, Robert Glen

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ. (ANU), Canberra, ACT, Australia

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

138

Lastpage

140

Abstract

The threshold switching characteristics of amorphous NbO_x thin films is investigated with particular emphasis on temperature dependence of the switching characteristics. Threshold switching in this material is believed to result from a thermally-induced insulator-metal-transition (IMT) induced along a filamentary path by local Joule heating. Increasing the operating temperature is shown to lead to a reduction in the resistance of the high-resistance state and to a reduction in the threshold switching voltage. These results are discussed in relation to the transport properties of NbO_x and the IMT switching model.

Keywords

electrical conductivity transitions; electrical resistivity; metal-insulator transition; niobium compounds; thin films; IMT switching model; NbO_x; high-resistance state; local Joule heating; temperature dependence; thermally-induced insulator-metal-transition; thin films; threshold switching; transport properties; Materials; Resistance; Switches; Temperature; Temperature dependence; Temperature measurement; Threshold voltage; Amorphous NbOx; Non-volatile memory; Selector Device; Threshold Switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038673

Filename

7038673