DocumentCode
113321
Title
Issues in source calibration for biased target ion beam deposition
Author
Radhakrishnan, N. ; Jeffery, R.D. ; Martyniuk, M. ; Woodward, R.C. ; Dell, J.H. ; Faraone, L.
Author_Institution
Sch. of Electr. Electron. & Comput. Sci. Eng., Univ. of Western Australia, Perth, WA, Australia
fYear
2014
fDate
14-17 Dec. 2014
Firstpage
141
Lastpage
143
Abstract
We report issues associated with the calibration of a biased target ion beam deposition system. Variations in deposition rates and oxygen flow have been observed when depositing individual metal oxide films immediately after films deposited from different targets as compared to depositions following films from the same target.
Keywords
bismuth compounds; calibration; cerium compounds; ion beam assisted deposition; thin films; (CeBi)3Fe5O12; biased target ion beam deposition; deposition rates; metal oxide films; oxygen flow; source calibration; Australia; Bismuth; Cerium; Educational institutions; Films; Iron; bismuth oxide; cerium oxide; chamber evacuation; chamber passivation; deposition rate; iron oxide; target poisoning;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location
Perth, WA
Print_ISBN
978-1-4799-6867-1
Type
conf
DOI
10.1109/COMMAD.2014.7038674
Filename
7038674
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