Indium tin oxide film characterization using the classical Hall Effect

Author

van Beveren, L. H. Willems ; Panchenko, E. ; Anachi, N. ; Hyde, L. ; Smith, D. ; James, T.D. ; Roberts, A. ; McCallum, J.C.

Author_Institution

Sch. of Phys., Univ. of Melbourne, Melbourne, VIC, Australia

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

144

Lastpage

145

Abstract

We have used the classical Hall Effect to electrically characterize indium tin oxide (ITO) films grown by two different techniques on silica substrates. ITO films have the unique property that they can be both electrically conducting (and to be used for a gate electrode for example) as well as optically transparent (at least in the visible part of the spectrum). In the near infrared (NIR) the transmission typically reduces. However, the light absorption can in principle be compensated by growing thinner films.

Keywords

Hall effect; electrical conductivity; indium compounds; infrared spectra; light absorption; semiconductor growth; semiconductor thin films; tin compounds; visible spectra; ITO; ITO films; SiO₂; classical Hall effect; electrically conducting films; indium tin oxide film characterization; light absorption; near infrared spectra; optically transparent films; silica substrate; Annealing; Charge carrier density; Conductivity; Films; Hall effect; Indium tin oxide; Silicon; Hall Effect; indium tin oxide; magnetic field measurement; semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038675

Filename

7038675