Title :
Indium tin oxide film characterization using the classical Hall Effect
Author :
van Beveren, L. H. Willems ; Panchenko, E. ; Anachi, N. ; Hyde, L. ; Smith, D. ; James, T.D. ; Roberts, A. ; McCallum, J.C.
Author_Institution :
Sch. of Phys., Univ. of Melbourne, Melbourne, VIC, Australia
Abstract :
We have used the classical Hall Effect to electrically characterize indium tin oxide (ITO) films grown by two different techniques on silica substrates. ITO films have the unique property that they can be both electrically conducting (and to be used for a gate electrode for example) as well as optically transparent (at least in the visible part of the spectrum). In the near infrared (NIR) the transmission typically reduces. However, the light absorption can in principle be compensated by growing thinner films.
Keywords :
Hall effect; electrical conductivity; indium compounds; infrared spectra; light absorption; semiconductor growth; semiconductor thin films; tin compounds; visible spectra; ITO; ITO films; SiO2; classical Hall effect; electrically conducting films; indium tin oxide film characterization; light absorption; near infrared spectra; optically transparent films; silica substrate; Annealing; Charge carrier density; Conductivity; Films; Hall effect; Indium tin oxide; Silicon; Hall Effect; indium tin oxide; magnetic field measurement; semiconductor devices;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038675
