Surface plasmon enhanced light emission from AlN/GaN superlattices structure in the UV region

Author

Tang, Johnny ; Reece, Peter J.

Author_Institution

Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

146

Lastpage

148

Abstract

We report on the surface plasmon enhanced UV light emission from AlN/GaN superlattice structures grown on a c-plane sapphire substrate. An Al layer is selectively deposited on the top of the structures. Photoluminescence measurements from back side of the structures demonstrate output light intensity was enhanced at 291nm wavelength. This enhancement can be attributed to an increase in the spontaneous emission rate via resonance coupling between excitons in AlN/GaN superlattices and surface plasmons in the aluminum layer.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; spectral line intensity; spontaneous emission; surface plasmons; wide band gap semiconductors; AlN-GaN; UV light emission; UV region; c-plane sapphire substrate; excitons; output light intensity; photoluminescence; resonance coupling; spontaneous emission rate; superlattices; surface plasmon enhanced light emission; Gallium nitride; III-V semiconductor materials; Light emitting diodes; Optical surface waves; Plasmons; Surface waves; Temperature measurement; Ill-Nitride Semiconductors; Photoluminescence (PL); Superlattices (SLs); Surface plasmon (SP); Ultraviolet light emitting diode (UVLED);

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038676

Filename

7038676