Title :
Intrinsic gate delay of GaAs/AlGaAs single and double heterostructure I2L circuits
Author :
Mazhari, Baquer ; Morkoc, H.
Author_Institution :
Illinois Univ., Urbana, IL, USA
fDate :
7/2/1992 12:00:00 AM
Abstract :
An analytical model is used to compare minimum gate delay in GaAs/AlGaAs single and double heterostructure I2L circuits. It is shown that for a moderate base doping level a single heterojunction bipolar transistor incorporated in Schottky coupled I2L circuit offers the smallest delay.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; delays; gallium arsenide; heterojunction bipolar transistors; integrated injection logic; integrated logic circuits; GaAs-AlGaAs; HBT; Schottky coupled; analytical model; base doping level; double heterostructure I 2L circuits; logic IC; minimum gate delay; single heterojunction bipolar transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920832
