Strain simulation and MBE growth of CdTe on GaSb substrates

Author

Gu, R.J. ; Lei, W. ; Antoszewski, J. ; Dell, J. ; Faraone, L.

Author_Institution

Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

164

Lastpage

167

Abstract

In this paper, we present a study on ANSYS strain analysis and MBE growth of CdTe epilayers on GaSb substrates. The ANSYS simulation result shows that GaSb performs much better than other alternative substrates, e.g. GaAs. To verify the simulation results, CdTe buffer layers were grown by MBE on GaSb, which show material quality comparable to or slightly better than that on GaAs substrate. Furthermore, TEM study on the CdTe layers grown on GaSb indicates that fewer dislocations are generated around the interface between CdTe and GaSb, which accords with the simulation results. This preliminary study shows the great potential of GaSb to be next generation alternative substrates for growing high quality HgCdTe infrared materials.

Keywords

II-VI semiconductors; buffer layers; cadmium compounds; dislocations; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; wide band gap semiconductors; ANSYS strain analysis; CdTe buffer layer growth; CdTe epilayers; CdTe-GaSb; GaSb; MBE growth; TEM; dislocations; high quality HgCdTe infrared material; next generation alternative substrate; Buffer layers; Finite element analysis; Gallium arsenide; Lattices; Strain; Substrates; Alternative Substrates; CdTe; HgCdTe; MBE;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038681

Filename

7038681