Title :
InP-based radial heterostructures grown on [100] nanowires
Author :
Fonseka, H.A. ; Caroff, P. ; Guo, Y. ; Wang, F. ; Wong-Leung, J. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
InP-InxGa(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability in the near to mid-infrared region is achieved by controlling the thickness and composition of the quantum well.
Keywords :
III-V semiconductors; MOCVD; energy gap; gallium arsenide; indium compounds; nanofabrication; nanowires; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InP-InxGa(1-x)As-InP; InP-based radial heterostructures; [100] nanowires; band-gap tunability; bright emission; mid-infrared region; octagonal cross-section; quantum well tube structures; temperature 293 K to 298 K; {011} side facets; {100} side facets; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Nanowires; Physics; Substrates; Anisotropie facet growth; InGaAs; InP nanowires; Photoluminescence; Quantum well tube;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038682
