Title :
Fabrication and characterization of few-hole quantum dots in undoped GaAs/AlGaAs heterostructures
Author :
Wang, D.Q. ; Klochan, O. ; Farrer, I. ; Ritchie, D.A. ; Hamilton, A.R.
Author_Institution :
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
Abstract :
We fabricated a single hole quantum dot on a AlGaAs/GaAs heterostructure with no intentional doping. The hole quantum dot shows varying charging energy and clear excited states, which suggests that it is in the last-few-hole regime. By changing the confinement of the barrier gates, the device can also be defined as a double quantum dot with tunable interdot coupling.
Keywords :
III-V semiconductors; aluminium compounds; excited states; gallium arsenide; hole mobility; semiconductor growth; semiconductor heterojunctions; semiconductor quantum dots; AlGaAs-GaAs; barrier gate confinement; charging energy; double quantum dot; excited states; few-hole quantum dots; interdot coupling; single hole quantum dot; undoped heterostructures; Charge carrier processes; Couplings; Fabrication; Gallium arsenide; Logic gates; Magnetoelectronics; Quantum dots; III-V semiconductor materials; Semiconductor nanostructures; quantum dots; semiconductor devices;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038683
