Title :
Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices
Author :
Chen, Kevin J. ; Niu, Guofu
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fDate :
2/1/2003 12:00:00 AM
Abstract :
The circuit concept of programmable logic gates based on the controlled quenching of series-connected negative differential resistance (NDR) devices is introduced, along with the detailed logic synthesis and circuit modeling. At the rising edge of a clocked supply voltage, the NDR devices are quenched in the ascending order of peak currents that can be reordered by the control gates and input gates biases, thus, providing programmable logic functions. The simulated results agree well with the experimental demonstration of the programmable logic gate fabricated by a monolithic integrated resonant tunneling diode/high electron mobility transistor technology.
Keywords :
high electron mobility transistors; logic design; logic gates; negative resistance circuits; programmable circuits; programmable logic devices; resonant tunnelling diodes; circuit modeling; clocked supply voltage; controlled quenching; high electron mobility transistor; logic synthesis; monolithic integrated RTD/HEMT technology; negative differential resistance devices; programmable logic functions; programmable logic gates; resonant tunneling diode; series-connected NDR devices; Circuit synthesis; Clocks; Logic circuits; Logic devices; Logic functions; Logic gates; Programmable control; Programmable logic arrays; Programmable logic devices; Voltage control;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2002.807403