Title :
Nanoindentation of Si1−xGex thin films prepared by biased target ion beam deposition
Author :
Ruijing Ge ; Xiaowei Hou ; Brookshire, Kirsten ; Krishnan, N. Radha ; Silva, Dilusha ; Bumgarner, John ; Yinong Liu ; Faraone, Lorenzo ; Martyniuk, Mariusz
Author_Institution :
Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
Abstract :
The mechanical properties of Si1-xGex thin films are studied via nanoindentation. The Si1-xGex thin films are prepared with a biased target ion beam deposition (BTIBD) method. We investigate the effect of varying the Si to Ge composition ratio on the elastic modulus and hardness of the resulting alloyed films. In comparison to pure BTIBD Si (Esi = 154GPa, Hsi = 9.9GPa), for Si1-xGex a decreasing trend in Young´s modulus and hardness is observed to be associated with the increase in Ge content, and for Si0.5Ge0.5 the values of 139 GPa and 8.4GPa are found to represent the Young´s modulus and hardness, respectively.
Keywords :
Ge-Si alloys; Young´s modulus; hardness; ion beam assisted deposition; nanoindentation; semiconductor materials; semiconductor thin films; Si1-xGex; Young´s modulus; alloyed films; biased target ion beam deposition method; composition ratio; elastic modulus; hardness; nanoindentation; thin films; Films; Germanium; Ion beams; Silicon; Substrates; Young´s modulus; BTIBD; amorphous silicon; germanium; hardness; nanoindentation; young´s modulus;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038692
