Title :
Highly stable operation of AlGaInP/GaInP strained multiquantum well visible laser diodes
Author :
Hashimoto, Jun ; Katsuyama, Tomokazu ; Shinkai, J. ; Yoshida, Isao ; Hayashi, H.
Author_Institution :
Sumitomo Electr. Ind. Ltd., Yokohama, Japan
fDate :
7/2/1992 12:00:00 AM
Abstract :
The long-term reliability of AlGaInP/GaInP strained multiquantum well (SMQW) lasers has been investigated. Highly stable operation with low operation current for more than 5500 h has been achieved under 50 degrees C, 3 mW test conditions, without sudden or rapid failures due to strain induced defects. The estimated mean time to failure (MTTF) is 10900 h, which is comparable to that of the conventional DH laser and long enough for practical use.
Keywords :
III-V semiconductors; aluminium compounds; failure analysis; gallium compounds; indium compounds; life testing; reliability; semiconductor device testing; semiconductor junction lasers; stability; 10900 hr; 3 mW; 50 degC; 5500 hr; AlGaInP-GaInP; MTTF; long-term reliability; mean time to failure; semiconductor lasers; stable operation; strain induced defects; strained multiquantum well; visible laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920844
