Title :
nBn T2SLs InAs/GaSb/B-AlGaSb HOT detector for fast frequency response operation
Author :
Martyniuk, P. ; Pusz, W. ; Gawron, W. ; Stepien, D. ; Kubiszyn, L. ; Krishna, S. ; Rogalski, A.
Author_Institution :
Inst. of Appl. Phys., Mil. Univ. of Technol., Warsaw, Poland
Abstract :
This paper reports on response time of mid-wavelength infrared nBn detector based on type-II 10 Monolayer/10 Monolayer InAs/GaSb superlattice structure with Al0.2Ga0.8Sb barrier. The detector structure is simulated with the numerical platform APSYS by Crosslight Inc. A detailed analysis of response time as a function of bias is performed and compared to experimental nBn detector results and PIN type-II InAs/GaSb photodiode. Time response of the nBn detector with peak wavelength, λPeak = 4.4 μm at T = 200 K, V = 500 mV and series resistance, RSeries = 100 Ω is estimated τs ≈ 340 ps.
Keywords :
III-V semiconductors; aluminium compounds; finite element analysis; frequency response; gallium compounds; indium compounds; infrared detectors; p-i-n photodiodes; semiconductor superlattices; APSYS; InAs-GaSb-AlGaSb; PIN type-II photodiode; high operating temperature; infrared nBn T2SL detector; numerical simulation; photodiode; resistance 100 ohm; response time analysis; temperature 200 K; type-II superlattice structure; voltage 500 mV; wavelength 4.4 mum; Detectors; Frequency response; Infrared detectors; Photonic band gap; Physics; Superlattices; Time factors; Infrared detectors; frequency response; nBn unipolar photodetector; photodetectors;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038697
