Title :
Recombination, gain and bandwidth characteristics of 1.3-µm semiconductor laser amplifiers
Author :
Wang, Jinwei ; Olesen, Henning ; Stubkjaer, Kristian E.
Author_Institution :
Technical University of Denmark, Lyngby, Denmark
fDate :
1/1/1987 12:00:00 AM
Abstract :
The influence of the spontaneous recombination mechanism and the temperature- and wavelength-dependent material gain on the performance of 1.3-μm InGaAsP traveling-wave semiconductor laser amplifiers is analyzed. Measurements of signal gain are presented. Frequency detuning and optical bandwidth characteristics are discussed. By considering the trade-off between optical bandwidth and resonant signal gain, guidelines for the requirements to the facet reflectivity are given.
Keywords :
Gallium materials/lasers; Laser amplifiers; Traveling wave amplifiers; Bandwidth; Gain measurement; Optical materials; Performance analysis; Performance gain; Radiative recombination; Semiconductor lasers; Semiconductor materials; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.1987.1075407
