DocumentCode
1133464
Title
Recombination, gain and bandwidth characteristics of 1.3-µm semiconductor laser amplifiers
Author
Wang, Jinwei ; Olesen, Henning ; Stubkjaer, Kristian E.
Author_Institution
Technical University of Denmark, Lyngby, Denmark
Volume
5
Issue
1
fYear
1987
fDate
1/1/1987 12:00:00 AM
Firstpage
184
Lastpage
189
Abstract
The influence of the spontaneous recombination mechanism and the temperature- and wavelength-dependent material gain on the performance of 1.3-μm InGaAsP traveling-wave semiconductor laser amplifiers is analyzed. Measurements of signal gain are presented. Frequency detuning and optical bandwidth characteristics are discussed. By considering the trade-off between optical bandwidth and resonant signal gain, guidelines for the requirements to the facet reflectivity are given.
Keywords
Gallium materials/lasers; Laser amplifiers; Traveling wave amplifiers; Bandwidth; Gain measurement; Optical materials; Performance analysis; Performance gain; Radiative recombination; Semiconductor lasers; Semiconductor materials; Semiconductor optical amplifiers; Stimulated emission;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.1987.1075407
Filename
1075407
Link To Document