Title :
Low-Threshold-Voltage MoN/HfAlO/SiON p-MOSFETs With 0.85-nm EOT
Author :
Chang, M.F. ; Lee, P.T. ; Chin, Albert
Author_Institution :
Dept. of Photonics, Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
By using HfAlO as a capping layer on SiON, MoN/HfAlO/SiON p-MOSFETs show an effective work function of 5.1 eV, a low threshold voltage of -0.1 V, and a peak hole mobility of 80 cm2/(Vmiddots) at small equivalent oxide thickness of 0.85 nm. These self-aligned and gate-first p-MOSFETs processes, with standard ion implantation and 1000degC rapid thermal annealing, are fully compatible with current very large scale integration fabrication lines.
Keywords :
MOSFET; annealing; hafnium compounds; hole mobility; ion implantation; molybdenum compounds; silicon compounds; work function; MoN-HfAlO-SiON; capping layer; effective work function; electron volt energy 5.1 eV; equivalent oxide thickness; gate-first p-MOSFETs process; hole mobility; large scale integration fabrication lines; low-threshold-voltage p-MOSFETs; self-aligned p-MOSFETs process; size 0.85 nm; standard ion implantation; temperature 1000 degC; thermal annealing; voltage -0.1 V; Capping layer; HfAlO; MoN; p-MOSFETs;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2023824
