DocumentCode
113349
Title
Plasmonic cavities for increasing the radiative efficiency of GaAs nano wires
Author
Mokkapati, S. ; Saxena, D. ; Nian Jiang ; Tan, H.H. ; Jagadish, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2014
fDate
14-17 Dec. 2014
Firstpage
244
Lastpage
245
Abstract
We report a post-growth approach to increase the radiative recombination efficiency of GaAs nanowires, beyond what has been achieved using surface passivation. This is done by coupling the nanowires to resonant plasmonic nanocavities to reduce the radiative recombination lifetime of minority carriers, thereby increasing the radiative efficiency by an order of magnitude.
Keywords
III-V semiconductors; carrier lifetime; electron-hole recombination; gallium arsenide; minority carriers; nanowires; plasmonics; GaAs; GaAs nanowires; minority carriers; post-growth approach; radiative recombination efficiency; radiative recombination lifetime; resonant plasmonic nanocavities; surface passivation; Absorption; Cavity resonators; Gallium arsenide; Nanowires; Plasmons; Radiative recombination; Surface treatment; GaAs; nanowires; optoelectronic devices; plasmonics; radiative efficiency;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location
Perth, WA
Print_ISBN
978-1-4799-6867-1
Type
conf
DOI
10.1109/COMMAD.2014.7038702
Filename
7038702
Link To Document