Title :
Plasmonic cavities for increasing the radiative efficiency of GaAs nano wires
Author :
Mokkapati, S. ; Saxena, D. ; Nian Jiang ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We report a post-growth approach to increase the radiative recombination efficiency of GaAs nanowires, beyond what has been achieved using surface passivation. This is done by coupling the nanowires to resonant plasmonic nanocavities to reduce the radiative recombination lifetime of minority carriers, thereby increasing the radiative efficiency by an order of magnitude.
Keywords :
III-V semiconductors; carrier lifetime; electron-hole recombination; gallium arsenide; minority carriers; nanowires; plasmonics; GaAs; GaAs nanowires; minority carriers; post-growth approach; radiative recombination efficiency; radiative recombination lifetime; resonant plasmonic nanocavities; surface passivation; Absorption; Cavity resonators; Gallium arsenide; Nanowires; Plasmons; Radiative recombination; Surface treatment; GaAs; nanowires; optoelectronic devices; plasmonics; radiative efficiency;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038702
