DocumentCode
1133502
Title
Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy
Author
Benchimol, J.L. ; Alexandre, F. ; Dubon-Chevallier, C. ; Heliot, Fabien ; Bourguiga, R. ; Dangla, J. ; Sermage, B.
Author_Institution
CNET, Bagneux, France
Volume
28
Issue
14
fYear
1992
fDate
7/2/1992 12:00:00 AM
Firstpage
1344
Lastpage
1345
Abstract
Current gains close to 200 are reported in carbon-doped base heterojunction bipolar transistors grown by chemical beam epitaxy, for base sheet resistance of 460 Omega / Square Operator . This result was made possible by the excellent quality of the carbon-doped GaAs layers, as demonstrated by the hole mobility and the minority carrier lifetime measurements.
Keywords
carbon; carrier lifetime; carrier mobility; chemical beam epitaxial growth; heterojunction bipolar transistors; minority carriers; semiconductor growth; C doped base; GaAs:C; HBT; chemical beam epitaxy; heterojunction bipolar transistor; high gain; hole mobility; minority carrier lifetime;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920853
Filename
149396
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