Title :
Selective area epitaxial growth of InP nanowire array for solar cell applications
Author :
Gao, Q. ; Fu, L. ; Wang, F. ; Guo, Y. ; Li, Z.Y. ; Peng, K. ; Li Li ; Li, Z. ; Wenas, Y. ; Mokkapati, S. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ~ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.
Keywords :
III-V semiconductors; MOCVD; carrier lifetime; indium compounds; minority carriers; nanofabrication; nanowires; semiconductor epitaxial layers; semiconductor growth; solar cells; InP; axially doped n-i-p structure; high quality stacking fault free wurtzite nanowires; metalorganic chemical vapour deposition; nanowire array; photovoltaic behaviors; room temperature minority carrier lifetime; selective area epitaxial growth; solar cell; temperature 293 K to 298 K; Arrays; Epitaxial growth; Indium phosphide; MOCVD; Nanoscale devices; Photovoltaic cells; Scanning electron microscopy; MOCVD; nanowire; selective area epitaxy; solar cell;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038704
