Title :
Formation of intermediate band in ZnTe: O highly mismatched alloy synthesized by ion implantation
Author :
Ye, J.D. ; Zhen, K. ; Gu, S.L. ; Wang, F. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
ZnTe:O highly mismatched alloys have been produced by isoelectric oxygen implantation into ZnTe and the micro structural and optical properties of ZnTe:O materials have been investigated in detail. The proper dose of oxygen ions led to the formation of intermediate band located at the energy level of ~0.45eV below the conduction band while high dose of oxygen ions caused an amorphous ZnTe surface layer and enhanced the deep level emission around 1.6eV. The results suggest that the reduction of lattice disorder is needed to convert localized states of intermediate band into extended states, which is crucial to realize high efficiency ZnTe:O based intermediate band solar cells.
Keywords :
II-VI semiconductors; conduction bands; crystal growth from vapour; crystal microstructure; deep levels; ion implantation; oxygen; photoluminescence; semiconductor doping; semiconductor growth; time resolved spectra; wide band gap semiconductors; zinc compounds; ZnTe:O; amorphous surface layer; conduction band; deep level emission; energy level; extended states; highly mismatched alloy; intermediate band formation; intermediate band solar cells; ion implantation; isoelectric oxygen implantation; lattice disorder; localized states; microstructural properties; optical properties; Ion implantation; Laser excitation; Lattices; Metals; Photoluminescence; Photovoltaic cells; Raman scattering; II-VI semiconductors; highly mismatched alloy; intermediate band; ion implantation;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038706
