Title :
Temperature independent quantum well FET with delta channel doping
Author :
Young, P.G. ; Alterovitz, S.A. ; Schacham, S.E. ; Haugland, E.J.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
fDate :
7/2/1992 12:00:00 AM
Abstract :
A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300-1.4 K. Transistors were RF tested using on-wafer probing and a constant Gmax and Fmax were measured over the temperature range 300-70 K.
Keywords :
Hall effect; carrier density; doping profiles; high electron mobility transistors; semiconductor quantum wells; 300 to 1.4 K; FET; carrier concentration; constant Hall mobility; delta channel doping; doping concentration; on-wafer probing; quantum well structure; temperature independent device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920858
