Title :
Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires
Author :
Fan Wang ; Qian Gao ; Kun Peng ; Yanan Guo ; Zhe Li ; Lan Fu ; Smith, Leigh Morris ; Hark Hoe Tan ; Jagadish, Chennupati
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We demonstrate an optical method to evaluate the doping concentration, internal quantum efficiency (IQE) and non-radiative lifetime of semiconductor nanowires, through power dependent photoluminescence (PL) and time resolved PL (TRPL) measurement. Combining this method with standard PL and time resolved spectrum, we analyse the quality, band structure and doping distribution of Si doped InP nanowires. The doping result is correlated with electrical measurements of single nano wire device.
Keywords :
III-V semiconductors; band structure; carrier density; doping profiles; nanowires; photoluminescence; semiconductor doping; silicon; time resolved spectra; InP:Si; band structure; doping concentration; doping distribution; electrical properties; internal quantum efficiency; nonradiative lifetime; optical method; power dependent photoluminescence; semiconductor nanowires; single nanowire device; time resolved photoluminescence; Doping; Indium phosphide; Nanowires; Nonlinear optics; Physics; Radiative recombination; Semiconductor device measurement; doping; non-radiative lifetime; photoluminescence; semiconductor nanowires;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038709
