Finite element modeling of resistive switching in Nb2O5-based memory device

Author

Xinjun Liu ; Nandi, Sanjoy Kumar ; Venkatachalam, Dinesh Kumar ; Shuai Li ; Belay, Kidane ; Elliman, Robert Glen

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2014

fDate

14-17 Dec. 2014

Firstpage

280

Lastpage

282

Abstract

A physical electro-thermal model that describes bipolar resistance switching in Nb₂O₅-based memory devices is presented based on the finite element method. The switching mechanism is assumed to be controlled by the diffusion and drift of oxygen vacancies in conductive filaments (CFs). The proposed model correctly describes the microscopic morphology of the CF during the gradual reset transition, which provides an in-depth understanding of the operation mechanism in resistive-switching memory devices.

Keywords

conducting materials; finite element analysis; niobium compounds; random-access storage; switching circuits; CF; Nb₂O₅; ReRAM; bipolar resistance switching mechanism; conductive filament; finite element modeling; microscopic morphology; oxygen vacancy; physical electrothermal model; resistive-switching memory device; Conductivity; Electrodes; Equations; Mathematical model; Resistance; Switches; Thermal conductivity; Non-volatile memory; memory modeling; niobium oxide; resistive switching memory (ReRAM);

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4799-6867-1

Type

conf

DOI

10.1109/COMMAD.2014.7038711

Filename

7038711