DocumentCode :
113361
Title :
Resistive switching behavior in HfO2 with Nb as an oxygen exchange layer
Author :
Kumar Nandi, Sanjoy ; Xinjun Liu ; Shuai Li ; Kumar Venkatachalam, Dinesh ; Belay, Kidane ; Elliman, Robert Glen
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ. (ANU), Canberra, ACT, Australia
fYear :
2014
fDate :
14-17 Dec. 2014
Firstpage :
290
Lastpage :
293
Abstract :
The effect of Nb as an oxygen exchange layer in HfO2 based resistive random access memory (ReRAM) is investigated. The advantages of Nb are demonstrated by comparing the performance of Pt/HfO2/Pt and Pt/HfO2/Nb ReRAM devices. The former are shown to exhibit only unipolar resistive switching, while the latter exhibit a range of switching modes including stable bipolar operation.
Keywords :
electrical conductivity transitions; electrical resistivity; hafnium compounds; niobium; platinum; resistive RAM; Pt-HfO2-Nb; ReRAM; oxygen exchange layer; resistive random access memory; stable bipolar operation; switching modes; unipolar resistive switching; Hafnium compounds; Ions; Niobium; Physics; Resistance; Switches; Hafnium Oxide; Niobium Oxide Complementary Switching; Resistive Switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
Type :
conf
DOI :
10.1109/COMMAD.2014.7038714
Filename :
7038714
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=113361
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