• DocumentCode
    113361
  • Title

    Resistive switching behavior in HfO2 with Nb as an oxygen exchange layer

  • Author

    Kumar Nandi, Sanjoy ; Xinjun Liu ; Shuai Li ; Kumar Venkatachalam, Dinesh ; Belay, Kidane ; Elliman, Robert Glen

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ. (ANU), Canberra, ACT, Australia
  • fYear
    2014
  • fDate
    14-17 Dec. 2014
  • Firstpage
    290
  • Lastpage
    293
  • Abstract
    The effect of Nb as an oxygen exchange layer in HfO2 based resistive random access memory (ReRAM) is investigated. The advantages of Nb are demonstrated by comparing the performance of Pt/HfO2/Pt and Pt/HfO2/Nb ReRAM devices. The former are shown to exhibit only unipolar resistive switching, while the latter exhibit a range of switching modes including stable bipolar operation.
  • Keywords
    electrical conductivity transitions; electrical resistivity; hafnium compounds; niobium; platinum; resistive RAM; Pt-HfO2-Nb; ReRAM; oxygen exchange layer; resistive random access memory; stable bipolar operation; switching modes; unipolar resistive switching; Hafnium compounds; Ions; Niobium; Physics; Resistance; Switches; Hafnium Oxide; Niobium Oxide Complementary Switching; Resistive Switching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
  • Conference_Location
    Perth, WA
  • Print_ISBN
    978-1-4799-6867-1
  • Type

    conf

  • DOI
    10.1109/COMMAD.2014.7038714
  • Filename
    7038714
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=113361