Title :
Charge pumping through isolated dopant atoms
Author :
Tettamanzi, Giuseppe C. ; van der Heijden, Joost ; Rogge, Sven
Author_Institution :
Australian Centre of Excellence for Quantum Comput. & Commun. Technol., Univ. of New South Wales, Sydney, NSW, Australia
Abstract :
Recently, a new kind of quantised charge pumping has been demonstrated (see G. C. Tettamanzi et al, 2014 New J. Phys., 16 063036) by using a single dopant atom quantised charge pump (SDA-QCP). The characteristics of the SDA-QCP were found to be quite different from the more conventional quantum dot charge pumps (QD-QCPs). This difference originates from the intrinsic dissimilarity in the confinement potential that traps the electrons during the pumping cycle and results in a lower non-adiabatic excitation error rate for the SDA-QCP. Here the experimentally determined performance of the SDA-QCP is compared to a new model that describes the behaviour in terms of frequency, power and the position of the dopant in the channel.
Keywords :
MOSFET; charge pump circuits; confinement potential; dopant position; isolated dopant atoms; nonadiabatic excitation error rate; pumping cycle; quantised charge pumping; single dopant atom quantised charge pump; Charge pumps; Electric potential; Logic gates; Mathematical model; Radio frequency; Semiconductor process modeling; Transistors; MOSFETs; charge pumping; electron sources; electrons; field effect transistors; single atom transistors;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4799-6867-1
DOI :
10.1109/COMMAD.2014.7038716