DocumentCode :
1133720
Title :
Modeling ferroelectric capacitors for memory applications
Author :
Du, Xiao-Hong ; Sheu, Bing
Author_Institution :
Ramtron Int. Corp., Colorado Springs, CO, USA
Volume :
18
Issue :
6
fYear :
2002
fDate :
11/1/2002 12:00:00 AM
Firstpage :
10
Lastpage :
16
Abstract :
The ferroelectric capacitor model is the foundation for accurate simulation of ferroelectric hysteresis loops and minor loops, transitions between the loops under arbitrary voltage patterns, transient responses of ferroelectric capacitors to short voltage pulses with widths in the nano-second range, and temperature behaviors of ferroelectric capacitors. The simulation speed is the same as that for a typical nonlinear capacitor. To the circuit designers, a ferroelectric capacitor is represented as a two-port device like a capacitor. The parameters are extracted easily and reliably by curve fitting the measured hysteresis loops. The model is applicable to fast circuit simulations for large ferroelectric memory designs.
Keywords :
dielectric hysteresis; ferroelectric capacitors; ferroelectric storage; transient response; two-port networks; arbitrary voltage patterns; capacitor model; ferroelectric capacitors; ferroelectric hysteresis loops; memory applications; minor loops; nonlinear capacitor; short voltage pulses; simulation speed; temperature behaviors; transient responses; two-port device; Capacitors; EPROM; Ferroelectric films; Ferroelectric materials; Flash memory; Hysteresis; Nonvolatile memory; Polarization; Random access memory; Voltage;
fLanguage :
English
Journal_Title :
Circuits and Devices Magazine, IEEE
Publisher :
ieee
ISSN :
8755-3996
Type :
jour
DOI :
10.1109/MCD.2002.1175755
Filename :
1175755
Link To Document :
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