Title :
3-T ISFET front-end utilising parasitic device capacitance
Author :
Yuanqi Hu ; Georgiou, Pantelis
Author_Institution :
Inst. of Biomed. Eng., Imperial Coll. London, London, UK
Abstract :
A 3-T ion sensitive field effect transistor (ISFET) chemical sensor that utilises the parasitic drain-gate capacitance of the device is proposed. It is compact and consumes extremely low power, and at the same time is immune to capacitive division. Additionally, it provides in-pixel amplification dependent on the ratio of passivation and feedback (parasitic) capacitance. The fabricated sensor achieves 200 mV/pH sensitivity using this amplification mechanism.
Keywords :
chemical sensors; ion sensitive field effect transistors; 3T ISFET front-end; amplification mechanism; chemical sensor; feedback capacitance; in-pixel amplification; ion sensitive field effect transistor; parasitic device capacitance; parasitic drain-gate capacitance; passivation ratio;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.2488
