DocumentCode :
1134499
Title :
Sinusoidal and digital high-speed modulation of p-type substrate mass-transported diode lasers
Author :
Tsang, D.Z. ; Liau, Z.L.
Author_Institution :
MIT Lincoln Laboratory, Lexington, MA, USA
Volume :
5
Issue :
3
fYear :
1987
fDate :
3/1/1987 12:00:00 AM
Firstpage :
300
Lastpage :
304
Abstract :
The modulation characteristics of GaInAsP diode lasers grown on 
-type substrates have been studied on devices in which the parasitic bonding pads have been eliminated. The lasers have thresholds as low as 4.5 mA. The small-signal sinusoidal response is comparable to similar lasers made on 
-type substrates. A small-signal -3-dB frequency as high as 16.4 GHz has been measured with a 175- μm-long laser. The laser responds to large-signal digital word sequences at rates of 16 Gbit/s.
-type substrates have been studied on devices in which the parasitic bonding pads have been eliminated. The lasers have thresholds as low as 4.5 mA. The small-signal sinusoidal response is comparable to similar lasers made on -type substrates. A small-signal -3-dB frequency as high as 16.4 GHz has been measured with a 175- μm-long laser. The laser responds to large-signal digital word sequences at rates of 16 Gbit/s.Keywords :
Optical fiber transmitters, lasers; Bonding; Contact resistance; Digital modulation; Diode lasers; Electrical capacitance tomography; Indium phosphide; Optical modulation; Parasitic capacitance; Substrates; Zinc;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1987.1075505
Filename :
1075505
Link To Document :
