Title :
Traveling-wave photodetectors with high power-bandwidth and gain-bandwidth product performance
Author :
Lasaosa, Daniel ; Shi, Jin-Wei ; Pasquariello, Donato ; Gan, Kian-Giap ; Tien, Ming-Chun ; Chang, Hsu-Hao ; Chu, Shi-Wei ; Sun, Chi-Kuang ; Chiu, Yi-Jen ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
Traveling-wave photodetectors (TWPDs) are an attractive way to simultaneously maximize external quantum efficiency, electrical bandwidth, and maximum unsaturated output power. We review recent advances in TWPDs. Record high-peak output voltage together with ultrahigh-speed performance has been observed in low-temperature-grown GaAs (LTG-GaAs)-based metal-semiconductor-metal TWPDs at the wavelengths of 800 and 1300 nm. An approach to simultaneously obtain high bandwidth and high external efficiency is a traveling-wave amplifier-photodetector (TAP detector) that combines gain and absorption in either a sequential or simultaneous traveling-wave structure.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; infrared detectors; metal-semiconductor-metal structures; photodetectors; travelling wave amplifiers; 1300 nm; 800 nm; GaAs; gain-bandwidth product performance; high power-bandwidth product performance; low-temperature-grown GaAs; metal-semiconductor-metal photodetector; traveling-wave amplifier-photodetector; traveling-wave photodetectors; ultrahigh-speed performance; Absorption; Bandwidth; Gallium arsenide; Gallium nitride; High speed optical techniques; Optical saturation; Optical transmitters; Photodetectors; Power generation; Sun; Amplifier; GaAs; InGaAsP; high speed; photodetector; traveling wave;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2004.833963
