DocumentCode :
1134626
Title :
Recent advances in avalanche photodiodes
Author :
Campbell, Joe C. ; Demiguel, Stephane ; Ma, Feng ; Beck, Ariane ; Guo, Xiangyi ; Wang, Shuling ; Zheng, Xiaoguang ; Li, Xiaowei ; Beck, Jeffrey D. ; Kinch, Michael A. ; Huntington, Andrew ; Coldren, Larry A. ; Decobert, Jean ; Tscherptner, Nadine
Author_Institution :
Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
Volume :
10
Issue :
4
fYear :
2004
Firstpage :
777
Lastpage :
787
Abstract :
The development of high-performance optical receivers has been a primary driving force for research on III-V compound avalanche photodiodes (APDs). The evolution of fiber optic systems toward higher bit rates has pushed APD performance toward higher bandwidths, lower noise, and higher gain-bandwidth products. Utilizing thin multiplication regions has reduced the excess noise. Further noise reduction has been demonstrated by incorporating new materials and impact ionization engineering with beneficially designed heterostructures. High gain-bandwidth products have been achieved waveguide structures. Recently, imaging and sensing applications have spurred interest in low noise APDs in the infrared and the UV as well as large area APDs and arrays. This paper reviews some of the recent progress in APD technology.
Keywords :
III-V semiconductors; avalanche photodiodes; impact ionisation; noise; optical receivers; III-V compound avalanche photodiodes; impact ionization engineering; noise reduction; optical receivers; Avalanche photodiodes; Bandwidth; Bit rate; III-V semiconductor materials; Impact ionization; Noise reduction; Optical fibers; Optical materials; Optical noise; Optical receivers; APDs; Avalanche photodiodes; UV; impact ionization; infrared; multiplication noise; photodetectors; ultraviolet;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2004.833971
Filename :
1343964
Link To Document :
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