Title :
Linear array of Si-Ge heterojunction photodetectors monolithically integrated with silicon CMOS readout electronics
Author :
Masini, Gianlorenzo ; Cencelli, Valentino ; Colace, Lorenzo ; De Notaristefani, Francesco ; Assanto, Gaetano
Author_Institution :
Nonlinear Opt. & Optoelectron. Lab., Univ. Roma Tre, Rome, Italy
Abstract :
We describe a linear array of Ge-Si heterojunction photodiodes monolithically integrated on a complementary metal-oxide-semiconductor (CMOS) integrated circuit for detection and imaging in the near infrared. Detectors are realized by thermal evaporation of Ge films at the end of the standard CMOS process on substrates held at low temperature (300°C). Each of the 64 detectors is connected to a front-end stage for photocurrent integration and analog-to-digital conversion.
Keywords :
CMOS integrated circuits; Ge-Si alloys; arrays; elemental semiconductors; infrared detectors; infrared imaging; monolithic integrated circuits; photodetectors; readout electronics; 300 degC; Ge-Si; Si-Ge heterojunction photodetectors linear array; analog-to-digital conversion; complementary metal-oxide-semiconductor integrated circuit; near infrared detection; near infrared imaging; photocurrent integration; photodiodes; silicon CMOS readout electronics; thermal film evaporation; CMOS integrated circuits; Heterojunctions; Infrared detectors; Infrared imaging; Monolithic integrated circuits; Optical imaging; Photodetectors; Photodiodes; Readout electronics; Silicon; Germanium-on-silicon; NIR; monolithic integration; near-infrared; photodetectors;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2004.833970
