DocumentCode
1134689
Title
Solvent Effect on the Electrical Properties of Triisopropylsilylethynyl (TIPS) Pentacene Organic Thin-Film Transistors
Author
Choi, Kwang Nam ; Kim, Kyung Seok ; Chung, Kwan Soo ; Lee, Hosun
Author_Institution
Dept. of Electron. Eng., Kyung Hee Univ., Suwon, South Korea
Volume
9
Issue
3
fYear
2009
Firstpage
489
Lastpage
493
Abstract
We investigated the electrical properties of triisopropylsilylethynyl (TIPS) pentacene organic thin-film transistor (OTFT) depending on solvent type. TIPS pentacene was spin coated by using chlorobenzene, p-xylene, chloroform, and toluene as solvents. A broad spectrum of electrical properties was affected by the solvent choice. Fabricated OTFT with chlorobenzene shows field-effect mobility of 1.0 ?? 10-2 cm2/V ?? s, on/off ratio of 4.3 ?? 103, and threshold voltage of 5.5 V. In contrast, with chloroform, the mobility is 5.8 ?? 10-7 cm2/V ?? s, on/off ratio of 1.1 ?? 102, and threshold voltage of 1.7 V. Further investigation by measurement of the grain size of TIPS thin films by atomic force microscopy (AFM) and X-ray diffraction spectroscopy showed that solvents with higher boiling points resulted in larger grain sizes and improved crystallinity. The higher performance electrical characteristics are explained by large grain size and high crystallinity of the TIPS pentacene layer in films spin coated with higher boiling point such as chlorobenzene.
Keywords
X-ray diffraction; atomic force microscopy; grain size; organic field effect transistors; organic semiconductors; semiconductor device measurement; solvent effects; spin coating; thin film transistors; AFM; OTFT; X-ray diffraction spectroscopy; atomic force microscopy; chlorobenzene; chloroform; crystallinity; electrical properties; field-effect mobility; organic thin-film transistor; p-xylene; solvent effect; spin coating; toluene; triisopropylsilylethynyl pentacene; voltage 1.7 V; voltage 5.5 V; Organic thin-film transistor (OTFT); pentacene; solvent effect; triisopropylsilylethynyl (TIPS);
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2009.2027227
Filename
5165024
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