Title :
X-ray detection using the quantum-well exciton nonlinearity
Author :
Eugster, Cristopher C. ; Hagelstein, Peter L.
Author_Institution :
Res. Lab. of Electron., MIT, Cambridge, MA, USA
fDate :
1/1/1990 12:00:00 AM
Abstract :
Two related schemes for detecting X-rays based on (1) the scattering and (2) the reflection of a pulsed optical probe beam by carriers produced by the absorption of a single energetic X-ray photon are described. The detection method is based on the strong carrier density dependence of the (complex) index of refraction of the exciton absorption lines in a GaAs/AlGaAs multiple-quantum-well structure. These schemes can be used to construct a class of very sensitive gated X-ray detectors with micron spatial resolution and temporal resolution in the 10-30-ps regime
Keywords :
III-V semiconductors; X-ray detection and measurement; aluminium compounds; carrier density; excitons; gallium arsenide; light absorption; light reflection; light scattering; nonlinear optics; optical resolving power; refractive index; semiconductor quantum wells; 10 to 30 ps; GaAs-AlGaAs; X-ray detection; X-ray photon absorption; beam reflection; beam scattering; carriers; complex refractive index; detection method; exciton absorption lines; micron spatial resolution; multiple-quantum-well structure; pulsed optical probe beam; quantum-well exciton nonlinearity; sensitive gated X-ray detectors; single energetic X-ray photon; strong carrier density dependence; temporal resolution; Electromagnetic wave absorption; Excitons; Optical beams; Optical refraction; Optical scattering; Particle scattering; Quantum wells; Spatial resolution; X-ray detection; X-ray detectors;
Journal_Title :
Quantum Electronics, IEEE Journal of
