W-Band Active Down-Conversion Mixer in Bulk CMOS

Author

Zhang, Ning ; Xu, Haifeng ; Wu, Hsin-Ta ; Kenneth, K.O.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL

Volume

19

Issue

2

fYear

2009

Firstpage

98

Lastpage

100

Abstract

A W-band (76-77 GHz) active down-conversion mixer has been demonstrated using low leakage (higher V_T) NMOS transistors of a 65-nm digital CMOS process with 6 metal levels. It achieves conversion gain of -8 dB at 76 GHz with a local oscillation power of 4 dBm ( ~ -2 dBm after de-embedding the on-chip balun loss), and 3 dB bandwidth of 3 GHz. The SSB noise figures are 17.8-20 dB (11.3-13.5 dB after de-embedding on-chip input balun loss) between 76 and 77 GHz. IP_1dB is -6.5 dBm and IIP3 is 2.5 dBm ( ~ -13 and ~ -4 dBm after de-embedding the on-chip balun loss). The mixer consumes 5 mA from a 1.2 V supply.

Keywords

CMOS digital integrated circuits; MIMIC; MOSFET; circuit oscillations; millimetre wave mixers; NMOS transistors; W-band active down-conversion mixer; bandwidth 3 GHz; bandwidth 76 GHz to 77 GHz; conversion gain; current 5 mA; de-embedding on-chip input balun loss; digital CMOS process; local oscillation power; noise figure 11.3 dB to 13.5 dB; noise figure 17.8 dB to 20 dB; noise figures; voltage 1.2 V; CMOS; Gilbert-cell; W-band; down-conversion mixer; millimeter-wave;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2008.2011331

Filename

4770119