• DocumentCode
    1135183
  • Title

    Nanosecond Switching and Wavelength Tuning of External-Cavity Laser Diode Using a Reflective Electroabsorption Modulator

  • Author

    Bülters, Mike ; Breede, Michael ; Hofmann, Martin ; Jäger, Dieter

  • Author_Institution
    Zentrum fur Halbleitertechnik und Op- toelektronik, Univ. Duisburg-Essen, Duisburg, Germany
  • Volume
    21
  • Issue
    18
  • fYear
    2009
  • Firstpage
    1347
  • Lastpage
    1349
  • Abstract
    We present a novel technique for ultrafast on-off switching and wavelength tuning of an external-cavity laser diode (ECLD) using an intracavity reflective electroabsorption modulator array as the end mirror. on-off and wavelength switching of the ECLD are based upon the electrically induced control of the modulator´s reflectivity yielding a modulation of the cavity losses and hence a modulation of the lasing threshold. We experimentally demonstrate on-off switching of selected wavelengths with a contrast in excess of 40 dB. Ultrafast modulation in the nanosecond-regime has been achieved which is close to the fundamental physical speed limit of the ECLD.
  • Keywords
    aluminium compounds; gallium arsenide; high-speed optical techniques; laser tuning; modulators; optical switches; semiconductor lasers; AlAs-AlGaAs; external-cavity laser diode; nanosecond switching; reflective electroabsorption modulator; ultrafast on-off switching; wavelength tuning; Electroabsorption modulator (EAM); external cavity laser; laser diode; wavelength tuning and switching;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2009.2026585
  • Filename
    5165068