DocumentCode :
1135231
Title :
Experimental Study of the Lasing Modes of 1.3- 
m Highly Strained InGaAs–GaAs Quantum-Well Oxide-Confined VCSELs
Author :
Pougeoise, E. ; Gilet, P. ; Grosse, P. ; Grenouillet, L. ; Chelnokov, A. ; Gérard, J.M. ; Bouillard, J.-S. ; Lerondel, G. ; Blaize, S. ; Vilain, S. ; Bachelot, R. ; Royer, P. ; Hamelin, R. ; Berggren, J. ; Sundgren, P. ; Hammar, M.
Author_Institution :
Dept. Optronique, CEA-LETI Minatec, Grenoble
Volume :
21
Issue :
6
fYear :
2009
fDate :
3/15/2009 12:00:00 AM
Firstpage :
377
Lastpage :
379
Abstract :
We present an experimental study of the main modes involved in the emission properties of InGaAs-GaAs quantum-well oxide-confined long wavelength vertical-cavity surface-emitting lasers. Lasing properties are dominated by the so-called "oxide modes" and by aperture modes, respectively, for small and large driving currents. We present complementary investigations of the laser emission including far-field angular distribution and spectroscopic near-field optical microscopy to a better understanding of the nature of the "oxide modes".
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser modes; quantum well lasers; surface emitting lasers; GaAs; InGaAs-GaAs; far-field angular distribution; highly-strained quantum-well oxide-confined VCSEL; laser emission investigation; laser mode; oxide modes; spectroscopic near-field optical microscopy; vertical-cavity surface-emitting laser; wavelength 1.3 mum; Strained InGaAs quantum well (QW); transverse modes; vertical-cavity surface-emitting laser (VCSEL);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.2012170
Filename :
4770138
Link To Document :
