• DocumentCode
    1135231
  • Title

    Experimental Study of the Lasing Modes of 1.3- \\mu m Highly Strained InGaAs–GaAs Quantum-Well Oxide-Confined VCSELs

  • Author

    Pougeoise, E. ; Gilet, P. ; Grosse, P. ; Grenouillet, L. ; Chelnokov, A. ; Gérard, J.M. ; Bouillard, J.-S. ; Lerondel, G. ; Blaize, S. ; Vilain, S. ; Bachelot, R. ; Royer, P. ; Hamelin, R. ; Berggren, J. ; Sundgren, P. ; Hammar, M.

  • Author_Institution
    Dept. Optronique, CEA-LETI Minatec, Grenoble
  • Volume
    21
  • Issue
    6
  • fYear
    2009
  • fDate
    3/15/2009 12:00:00 AM
  • Firstpage
    377
  • Lastpage
    379
  • Abstract
    We present an experimental study of the main modes involved in the emission properties of InGaAs-GaAs quantum-well oxide-confined long wavelength vertical-cavity surface-emitting lasers. Lasing properties are dominated by the so-called "oxide modes" and by aperture modes, respectively, for small and large driving currents. We present complementary investigations of the laser emission including far-field angular distribution and spectroscopic near-field optical microscopy to a better understanding of the nature of the "oxide modes".
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser modes; quantum well lasers; surface emitting lasers; GaAs; InGaAs-GaAs; far-field angular distribution; highly-strained quantum-well oxide-confined VCSEL; laser emission investigation; laser mode; oxide modes; spectroscopic near-field optical microscopy; vertical-cavity surface-emitting laser; wavelength 1.3 mum; Strained InGaAs quantum well (QW); transverse modes; vertical-cavity surface-emitting laser (VCSEL);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2008.2012170
  • Filename
    4770138