Influence of silicon dioxide-silicon interface trap charges on the performance of monolithic metal-zinc oxide-silicon nitride-silicon dioxide-silicon convolver

Author

Panwar, Brishbhan S.

Author_Institution

Centre for Appl. Res. in Electron., Indian Inst. of Technol., New Delhi, India

Volume

50

Issue

1

fYear

2003

Firstpage

99

Lastpage

102

Abstract

An enhancement in the convolution efficiency is obtained by annihilating the SiO/sub 2/-Si interface trap charges in the metal-ZnO-Si/sub 3/N/sub 4/-SiO/sub 2/-Si convolver structure. The annealing process uses a source of hydrogen created underneath the SiO/sub 2/-Si interface by implanting H/sub 3//sup +/ ion followed by rapid thermal anneal of 5s at 900/spl deg/C. The silicon nitride layer is inducted to protect ZnO films from hydrogen influx during low temperature oxygen anneal.

Keywords

interface states; ion implantation; rapid thermal annealing; silicon; silicon compounds; surface acoustic wave convolution; zinc compounds; 900 degC; H/sub 3//sup +/ ion implantation; SiO/sub 2/-Si interface trap charge; ZnO-Si/sub 3/N/sub 4/-SiO/sub 2/-Si; convolution efficiency; metal-ZnO-Si/sub 3/N/sub 4/-SiO/sub 2/-Si monolithic SAW convolver; rapid thermal annealing; Convolution; Convolvers; Hydrogen; Protection; Rapid thermal annealing; Rapid thermal processing; Semiconductor films; Silicon; Temperature; Zinc oxide;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/TUFFC.2003.1176531

Filename

1176531