Title :
A Novel Gate-Assisted Reverse-Read Scheme to Control Bit Coupling and Read Disturb for Multibit/Cell Operation in Deeply Scaled Split-Gate SONOS Flash EEPROM Cells
Author :
Datta, Arnab ; Asnani, Rajesh ; Mahapatra, Souvik
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
Abstract :
A dual-node split-gate silicon-oxide-nitride-oxide-silicon cell with a novel read scheme is proposed for 2-bit/cell operation. Using suitable gate screening bias in reverse read, bit coupling can be reduced, even when low read V D is used to keep read disturb under control. The proposed read scheme maintains the memory window for dual-bit/cell operation for deeply scaled cells. Two-dimensional process, device, and Monte Carlo simulations are extensively used to design and understand cell operation.
Keywords :
Monte Carlo methods; flash memories; nitrogen compounds; silicon compounds; Monte Carlo simulation; bit coupling; deeply scaled split-gate SONOS flash EEPROM cells; dual-node split-gate silicon-oxide-nitride-oxide-silicon cell; gate screening; gate-assisted reverse-read scheme; memory window; multibit/cell operation; read disturb; 2-bit operation; Bit coupling; EEPROM; gate sensing; nonvolatile semiconductor memory; read disturb; scaling; silicon–oxide–nitride–oxide–silicon (SONOS); split gate; stack gate;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2025060
