Analytical model for optically generated currents in GaAs MESFETs

Author

Madjar, Asher ; Herczfeld, Peter R. ; Paolella, Arthur

Author_Institution

Center for Microwave-Lightwave Eng., Drexel Univ., Philadelphia, PA, USA

Volume

40

Issue

8

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

1681

Lastpage

1691

Abstract

The MESFET as an optically sensitive microwave element in MMICs has attracted much attention. The theoretical modeling of the device, however, needs more consideration. The authors propose an analytical model for the illuminated MESFET, complete in that all major contributions to the optical response are considered. The dependence of the response on bias conditions, the wavelength and intensity of the optical input, and the particulars of device structure, are incorporated in the model. The importance of the internal photovoltaic effect, which has not been properly modeled previously, is emphasized. The novel theoretical model is verified by experimental results

Keywords

III-V semiconductors; MMIC; OBIC; Schottky gate field effect transistors; gallium arsenide; phototransistors; semiconductor device models; GaAs; MESFETs; MMICs; analytical model; bias conditions; device structure; intensity; internal photovoltaic effect; optically generated currents; optically sensitive microwave element; wavelength; Analytical models; Charge carrier processes; Gallium arsenide; MESFETs; MMICs; Microwave devices; Optical control; Optical saturation; Optical sensors; Substrates;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.149548

Filename

149548