Thermal Stability Improvement of Vertical Conducting Green Resonant-Cavity Light-Emitting Diodes on Copper Substrates

Author

Huang, Y. ; Horng, R.H. ; Liu, P.L. ; Wu, J.Y. ; Wu, H.W. ; Wuu, D.S.

Author_Institution

Nat. Chung Hsing Univ., Taichung

Volume

20

Issue

10

fYear

2008

fDate

5/15/2008 12:00:00 AM

Firstpage

797

Lastpage

799

Abstract

Green light vertical-conducting resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on a Cu substrate by the combination of laser lift-off and plating techniques. The structure of the RCLED/Cu is consisted of the InGaN-GaN multiple-quantum-well active layer between three layers of the dielectric TiO-SiO distributed Bragg reflector as a top mirror and an Al metal layer as a bottom mirror. It was found that the RCLED with Cu substrate presents superior thermal dissipation and a stable electroluminescence emission peak wavelength (507 nm) under a high injection current. It is attributed to the Cu substrate providing a good heat sink and effectively reducing the junction temperature.

Keywords

III-V semiconductors; copper; distributed Bragg reflectors; electroluminescence; electroplating; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; thermal stability; wide band gap semiconductors; Cu; InGaN-GaN; TiO₂-SiO₂; bottom mirror; copper substrates; dielectric distributed Bragg reflector; electroluminescence emission; green light vertical-conducting resonant-cavity light-emitting diodes; heat sink; injection current; junction temperature; laser lift-off; multiple-quantum-well active layer; plating techniques; thermal dissipation; thermal stability; top mirror; Copper; Dielectric substrates; Distributed Bragg reflectors; Electroluminescence; Light emitting diodes; Mirrors; Quantum well devices; Resonance; Thermal conductivity; Thermal stability; InGaN; junction temperature; laser lift-off (LLO); resonant-cavity light-emitting diode (RCLED);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.921120

Filename

4492815