Title :
High-power ridge waveguide InGaAsN lasers fabricated with pulsed anodic oxidation
Author :
Yi Qu ; Liu, C.Y. ; Ma, S.G. ; Shu Yuan ; Baoxue Bo ; Guojun Liu ; Huilin Jiang
Author_Institution :
Sch. of Mater. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
High-power InGaAsN triple-quantum-well strain-compensated lasers grown by metal-organic chemical vapor deposition were fabricated with pulsed anodic oxidation. A maximum light power output of 145 mW was obtained from a 4-μm ridge waveguide uncoated laser diode in continuous-wave (CW) mode at room temperature. The devices operated in CW mode up to 130/spl deg/C with a characteristic temperature of 138 K in range of 20/spl deg/C-90/spl deg/C.
Keywords :
III-V semiconductors; MOCVD; anodisation; arsenic compounds; gallium arsenide; indium compounds; laser modes; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 130 degC; 138 K; 145 mW; 20 degC; 20 to 90 degC; 4 mum; InGaAsN; InGaAsN lasers; continuous-wave mode; high-power lasers; laser fabrication; metal-organic chemical vapor deposition; pulsed anodic oxidation; ridge waveguide lasers; room temperature; strain compensated lasers; triple-quantum-well lasers; uncoated laser diode; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Laser modes; Optical pulses; Oxidation; Power generation; Power lasers; Pulsed laser deposition; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.834879
