Title :
Fabrication of high-performance InGaAsN ridge waveguide lasers with pulsed anodic oxidation
Author :
Liu, C.Y. ; Yoon, S.F. ; Wang, S.Z. ; Fan, W.J. ; Qu, Y. ; Yuan, S.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
We have demonstrated high-performance InGaAsN triple-quantum-well ridge waveguide (RWG) lasers fabricated using pulsed anodic oxidation. The lowest threshold current density of 675 A/cm2 was obtained from a P-side-down bonded InGaAsN laser, with cavity length of 1600 μm and contact ridge width of 10 μm. The emission wavelength is 1295.1 nm. The transparency current density from a batch of unbonded InGaAsN RWG lasers was 397 A/cm2 (equivalent to 132 A/cm2 per well). High characteristic temperature of 138 K was also achieved from the bonded 10×1600-μm2 InGaAsN laser.
Keywords :
III-V semiconductors; anodisation; arsenic compounds; gallium arsenide; indium compounds; laser cavity resonators; optical fabrication; quantum well lasers; ridge waveguides; transparency; waveguide lasers; 10 mum; 1295.1 nm; 138 K; 1600 mum; InGaAsN; InGaAsN laser; P-side-down bonded laser; contact ridge; high-performance waveguide lasers; laser cavity; laser fabrication; pulsed anodic oxidation; ridge waveguide lasers; transparency current; triple-quantum-well lasers; unbonded lasers; Chemical lasers; Diode lasers; Gallium arsenide; Molecular beam epitaxial growth; Optical device fabrication; Optical pulses; Optical waveguides; Oxidation; Pulsed laser deposition; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.835214
