Fabrication of high-performance InGaAsN ridge waveguide lasers with pulsed anodic oxidation

Author

Liu, C.Y. ; Yoon, S.F. ; Wang, S.Z. ; Fan, W.J. ; Qu, Y. ; Yuan, S.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

16

Issue

11

fYear

2004

Firstpage

2409

Lastpage

2411

Abstract

We have demonstrated high-performance InGaAsN triple-quantum-well ridge waveguide (RWG) lasers fabricated using pulsed anodic oxidation. The lowest threshold current density of 675 A/cm² was obtained from a P-side-down bonded InGaAsN laser, with cavity length of 1600 μm and contact ridge width of 10 μm. The emission wavelength is 1295.1 nm. The transparency current density from a batch of unbonded InGaAsN RWG lasers was 397 A/cm² (equivalent to 132 A/cm² per well). High characteristic temperature of 138 K was also achieved from the bonded 10×1600-μm² InGaAsN laser.

Keywords

III-V semiconductors; anodisation; arsenic compounds; gallium arsenide; indium compounds; laser cavity resonators; optical fabrication; quantum well lasers; ridge waveguides; transparency; waveguide lasers; 10 mum; 1295.1 nm; 138 K; 1600 mum; InGaAsN; InGaAsN laser; P-side-down bonded laser; contact ridge; high-performance waveguide lasers; laser cavity; laser fabrication; pulsed anodic oxidation; ridge waveguide lasers; transparency current; triple-quantum-well lasers; unbonded lasers; Chemical lasers; Diode lasers; Gallium arsenide; Molecular beam epitaxial growth; Optical device fabrication; Optical pulses; Optical waveguides; Oxidation; Pulsed laser deposition; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.835214

Filename

1344050