120/spl deg/C 10-gb/s uncooled direct Modulated 1.3-μm AlGaInAs MQW DFB laser diodes

Author

Takagi, K. ; Shirai, S. ; Tatsuoka, Y. ; Watatani, C. ; Ota, T. ; Takiguchi, T. ; Aoyagi, T. ; Nishimura, T. ; Tomita, N.

Author_Institution

High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan

Volume

16

Issue

11

fYear

2004

Firstpage

2415

Lastpage

2417

Abstract

A 1.3-μm AlGaInAs multiquantum well ridge waveguide distributed feedback laser diode was developed. By forming n-InGaAsP grating in the n-InP cladding layer close to the active region, accumulation of the holes in the grating layer was reduced and over 5 mW of output power was obtained at 120/spl deg/C. Clear eye opening was confirmed with no mask hits for OC-192 under 10-Gb/s direct modulation at the temperature up to 120/spl deg/C.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical fibre communication; optical modulation; quantum well lasers; ridge waveguides; 1.3 mum; 10 Gbit/s; 120 degC; 5 mW; AlGaInAs; AlGaInAs laser diodes; DFB laser diodes; InGaAsP; MQW laser diodes; OC-192; clear eye opening; direct modulated laser diodes; direct modulation; distributed feedback laser diode; multiquantum well ridge waveguide; n-InGaAsP grating; n-InP cladding; optical fiber communication; uncooled laser diodes; Diode lasers; Fiber lasers; Gratings; Laser feedback; Optical waveguides; Photonic band gap; Quantum well devices; Semiconductor lasers; Temperature; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.834926

Filename

1344052